Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high k at channel
AssigneeApplied Materials, Inc.
InventorsBo ZHENG, Avgerinos V. GELATOS, Anshul VYAS, Raymond Hoiman HUNG
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Abstract
The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
Claims20
A method for processing a substrate, comprising:
- exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%;
- then
- exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor;
- and then
- exposing the surface of the substrate to second hydrogen radical species.
A method for processing a substrate, comprising:
- exposing a surface of the substrate to a plasma formed from a first fluorine-containing precursor and a first hydrogen-containing precursor in a first processing chamber;
- then
- exposing the surface of the substrate to hydrogen radical species in a second processing chamber, wherein the substrate is silicon germanium having a concentration of germanium in silicon above about 30%;
- then
- exposing the surface of the substrate to a plasma formed from a second fluorine-containing precursor and a second hydrogen-containing precursor in the first processing chamber;
- then
- annealing the substrate in the first processing chamber;
- and then
- forming an epitaxial layer on the surface of the substrate in a third processing chamber, wherein the substrate is transferred between the first, second, and third processing chambers within one processing system without breaking vacuum.
A method for forming an epitaxial layer on a surface of a substrate, comprising:
- removing native oxides or contaminants from the surface of the substrate by exposing the surface of the substrate to first hydrogen radical species, wherein the substrate has a concentration of germanium above 45% at source and drain regions of the substrate;
- then
- cleaning the surface of the substrate using a fluorine-containing plasma etch process;
- then
- exposing the surface of the substrate to second hydrogen radical species;
- and then
- forming an epitaxial layer on the surface of the substrate, wherein the epitaxial layer has a concentration of germanium above about 70%.
Dependencies are inferred from the claim text.