Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsKatsuyoshi HARADA, Yoshiro HIROSE, Atsushi SANO
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Abstract
A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
Claims16
A method of manufacturing a semiconductor device, comprising forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing:
- (a) supplying borazine-based gas including a ligand to the substrate;
- and
- (b) supplying a ligand desorption gas which desorbs the ligand to the substrate,
- wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
A substrate processing apparatus comprising:
- a process chamber configured to accommodate a substrate;
- a borazine-based gas supply system configured to supply borazine-based gas including a ligand to the substrate in the process chamber;
- a ligand desorption gas supply system configured to supply ligand desorption gas which desorbs the ligand to the substrate in the process chamber;
- a heater configured to heat the substrate in the process chamber;
- a pressure regulator configured to regulate a pressure in the process chamber;
- and
- a controller configured to control the borazine-based gas supply system, the ligand desorption gas supply system, the heater, and the pressure regulator so as to form a film having a borazine ring structure and containing boron and nitrogen on the substrate by intermittently performing an act of simultaneously performing:
- (a) supplying the borazine-based gas to the substrate in the process chamber;
- and
- (b) supplying the ligand desorption gas to the substrate in the process chamber,
- wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
A non-transitory computer-readable recording medium storing a program configured to cause a computer to perform forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing:
- (a) supplying borazine-based gas including a ligand to the substrate;
- and
- (b) supplying a ligand desorption gas which desorbs the ligand to the substrate,
- wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
Dependencies are inferred from the claim text.