Plasma processing apparatus

A plasma processing apparatus comprising:

• a processing chamber arranged inside a vacuum chamber, plasma being formed in a pressure-reduced inner space of the processing chamber;
• a stage arranged in the processing chamber and having an upper surface, a wafer to be processed using the plasma being mounted on the upper surface;
• an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the upper surface of the stage;
• and
• a high-frequency power supply for supplying high-frequency power to the stage during processing using the plasma, and
• the plasma processing apparatus consecutively processing a plurality of wafers one by one,
• wherein there are a plurality of processing steps of conducting processing using the plasma under different conditions and there are a plurality of periods when formation of plasma is stopped between the processing steps,
• wherein a process of forming a coating on an inner wall of the processing chamber is conducted before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of the plasma is stopped.