Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsTaichi Hirano, Ken Yoshida, Hikoichiro Sasaki, Satoshi Yamada, Yoshinobu Hayakawa, Junji Ishibashi, Fumitoshi Kumagai
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AssigneeTokyo Electron Limited
InventorsTaichi Hirano, Ken Yoshida, Hikoichiro Sasaki, Satoshi Yamada, Yoshinobu Hayakawa, Junji Ishibashi, Fumitoshi Kumagai
Estimating the term…
A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5<K<1, a constant reflection wave power PRH is generated on a high frequency transmission line of a plasma generation system even during a pulse-on period Ton. Meanwhile, during a pulse-off period Toff, a reflection wave power PRL decreases. By adjusting the value of K, a balance between the reflection wave power PRH during the pulse-on period Ton and the reflection wave power PRL during the pulse-off period Toff can be controlled.
A plasma processing apparatus of generating plasma by high frequency discharge of a processing gas within a decompression processing vessel that accommodates therein a processing target object, which is loaded into and unloaded from the processing vessel, and performing a process on the processing target object within the processing vessel with the plasma, the plasma processing apparatus comprising:
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