Ion implanter and method of ion beam tuning
AssigneeSumitomo Heavy Industries Ion Technology Co., Ltd.
InventorsKazuhiro Watanabe, Yuuji Takahashi, Yusuke Ueno
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Abstract
An energy analysis slit of an ion implanter is configured to enable switching between a standard slit opening used for implantation processing performed under a predetermined implantation condition and a high-precision slit opening having higher energy precision than the standard slit opening and used to tune an acceleration parameter for a radio frequency linear accelerator. The acceleration parameter is determined for the predetermined implantation condition so that at least a part of ions supplied to the radio frequency linear accelerator is accelerated to have target energy, and so that the beam current amount measured by a beam measurement unit is equivalent to a target beam current amount.
Claims24
An ion implanter comprising:
- a radio frequency linear accelerator that accelerates supplied ions in accordance with an acceleration parameter;
- an energy analysis magnet that is arranged downstream of the radio frequency linear accelerator;
- an energy analysis slit assembly that is arranged downstream of the energy analysis magnet;
- a beam measurement unit that measures a beam current amount at a downstream of the energy analysis slit assembly;
- and
- a controller that determines the acceleration parameter for a predetermined implantation condition,
- wherein the acceleration parameter is determined so that at least a part of the supplied ions is accelerated to have target energy, and so that the beam current amount measured by the beam measurement unit is equivalent to a target beam current amount,
- wherein the energy analysis slit assembly is configured to enable switching between a standard slit opening used for implantation processing performed under the predetermined implantation condition and a high-precision slit opening having higher energy precision than the standard slit opening and used to tune the acceleration parameter.
An ion implanter comprising:
- a radio frequency linear accelerator that accelerates supplied ions in accordance with an acceleration parameter;
- an energy analysis magnet that is arranged downstream of the radio frequency linear accelerator and that generates an ion deflecting magnetic field in a vertical direction perpendicular to a beam traveling direction;
- an energy analysis slit assembly that is arranged downstream of the energy analysis magnet and that is configured to enable switching between a standard slit opening having a first slit width in a horizontal direction perpendicular to the beam traveling direction and the vertical direction and a high-precision slit opening having a second slit width that is narrower than the first slit width in the horizontal direction;
- a beam measurement unit that measures a beam current amount at a downstream of the energy analysis slit assembly;
- and
- a controller that determines the acceleration parameter based on a beam current amount measured by the beam measurement unit with use of the high-precision slit opening.
A method of ion beam tuning in an ion implanter, the ion implanter comprising a radio frequency linear accelerator that accelerates supplied ions in accordance with an acceleration parameter, an energy analysis magnet that is arranged downstream of the radio frequency linear accelerator, and an energy analysis slit assembly that is arranged downstream of the energy analysis magnet, the energy analysis slit assembly configured to enable switching between a standard slit opening used for implantation processing performed under a predetermined implantation condition and a high-precision slit opening having higher energy precision than the standard slit opening and used to determine the acceleration parameter, the method comprising:
- switching the energy analysis slit assembly to the high-precision slit opening;
- measuring a beam current amount at a downstream of the high-precision slit opening;
- and
- determining the acceleration parameter for the predetermined implantation condition so that at least a part of the supplied ions is accelerated to have target energy, and so that the beam current amount measured is equivalent to a target beam current amount.
Dependencies are inferred from the claim text.