Method for testing redundancy area in semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorBum-Jun KWON
Life of this patent
Estimating the term…
Abstract
A method tests a redundancy area of a semiconductor memory device. The method includes receiving a redundancy address to select a redundancy area including spare memory cells to repair normal memory cells, checking the redundancy address based on repair use information to determine whether the redundancy area is an actually repaired area, enabling the redundancy area when the redundancy area is the actually repaired area, and outputting data read from the enabled redundancy area to practically perform a redundancy area test.
Claims20
A method for testing a redundancy area of a semiconductor memory device, the method comprising:
- receiving a redundancy address to select a redundancy area including spare memory cells to repair normal memory cells;
- checking the redundancy address based on repair use information to determine whether the redundancy area is an actually repaired area;
- enabling the redundancy area when the redundancy area is the actually repaired area;
- and
- outputting data read from the enabled redundancy area to practically perform a redundancy area test.
A method for testing a redundancy area of a semiconductor memory device, the method comprising:
- receiving a redundancy row address to select a row of a redundancy area;
- checking the redundancy row address based on repair row use information to determine whether the row of the redundancy area is an actually repaired row;
- enabling the row of the redundancy area when the row of the redundancy area is the actually repaired row;
- and
- outputting spare memory cell data read through the enabled row of the redundancy area to practically perform a redundancy area test.
A method for testing a memory, the method comprising:
- determining whether a row of a redundancy area of the memory is an actually repaired row, the redundancy area including one or more spare memory cells to repair one or more normal memory cells;
- enabling the redundancy area when the row is an actually repaired row;
- disabling actually unrepaired rows of the redundancy area;
- and
- controlling data to be read through the enabled row of the redundancy area to perform a redundancy area test.
Dependencies are inferred from the claim text.