Method and apparatus for writing data to non-volatile memory

Abstract

Devices and methods implemented therein are disclosed for storing data in memory pages of a non-volatile memory of the storage device. The device comprises a non-volatile memory, a reading circuit, a programming circuit and a read disturb detector. The non-volatile memory has an erased memory page comprising a plurality of multi-layer cells (MLCs). The reading circuit is configured to read a respective electric charge stored in each of the plurality of MLCs. The programming circuit is configured to store data in the plurality of MLCs at either one of a first storage density or a second storage density. The read disturb detector is configured to determine whether the erased memory page is read disturbed and if the erased memory page is read disturbed, cause the programming circuit to store data into the MLCs at the second storage density that is less than the first storage density.

Dependencies are inferred from the claim text.