Nonvolatile memory device and read method thereof

A read method of a nonvolatile memory device, comprising:

• detecting an elapsed time a memory block to be read of the nonvolatile memory device after a program of the memory block;
• selecting a level of a first unselect read voltage according to the elapsed time;
• and
• performing a read operation by supplying a select read voltage to a select word line, supplying the first unselect read voltage to at least one between the upper word line and the lower word line adjacent to the select word line and supplying a second unselect read voltage to remaining word lines of the memory block.

A nonvolatile memory device comprising:

• a memory cell array connected to a plurality of word lines;
• and
• a voltage generator for supplying a select read voltage to a select word line, a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line, a second unselect read voltage to at least one between an upper word line and a lower word line adjacent to the at least one word line where the first unselect read voltage is applied and a third unselect read voltage to remaining unselect word lines,
• wherein the first unselect read voltage has a level lower than the third unselect read voltage, and the second unselect read voltage has a level higher than the third unselect read voltage.

A nonvolatile memory device comprising:

• a memory cell array connected to a plurality of word lines;
• and
• a voltage generator for supplying a select read voltage to a select word line and a unselect read voltage to unselect word lines,
• wherein the voltage generator supplies the unselect read voltage having different levels according to a word line sequence of the unselect word lines from the select word line.