Programming method, memory storage device and memory controlling circuit unit

A memory storage device, comprising:

• a connection interface unit configured to couple to a host system;
• a rewritable non-volatile memory module comprising a plurality of physical erasing units;
• and
• a memory controlling circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory controlling circuit unit is configured to receive at least one first write command,
• wherein the memory controlling circuit unit is further configured to select a first physical erasing unit from the physical erasing units and send a first skipping write command sequence according to the at least one first write command, wherein the first skipping write command sequence instructs to execute a first skipping programming process,
• wherein the first skipping programming process comprises:
• programming a first word line among a plurality of word lines of the first physical erasing unit according to first data corresponding to the at least one first write command;
• and
• after the first word line is programmed, skipping at least one second word line adjacent to the first word line among the word lines of the first physical erasing unit, and programming a third word line not adjacent to the first word line among the word lines of the first physical erasing unit according to the first data.

A memory controlling circuit unit, configured to control a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, and the memory controlling circuit unit comprises:

• a host interface, configured to couple to a host system;
• a memory interface configured to couple to the rewritable non-volatile memory module;
• and
• a memory management circuit, coupled to the host interface and the memory interface,
• wherein the memory management circuit is configured to receive at least one first write command,
• wherein the memory management circuit is further configured to select a first physical erasing unit from the physical erasing units and send a first skipping write command sequence according to the at least one first write command, wherein the first skipping write command sequence instructs to execute a first skipping programming process,
• wherein the first skipping programming process comprises:
• programming a first word line among a plurality of word lines of the first physical erasing unit according to first data corresponding to the at least one first write command;
• and
• after the first word line is programmed, skipping at least one second word line adjacent to the first word line among the word lines of the first physical erasing unit, and programming a third word line not adjacent to the first word line among the word lines of the first physical erasing unit according to the first data.

A memory storage device, comprising:

• a connection interface unit configured to couple to a host system;
• a rewritable non-volatile memory module comprising a plurality of physical erasing units;
• and
• a memory controlling circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory controlling circuit unit uses a first word line among a plurality of word lines of a first physical erasing unit among the physical erasing units to store first data,
• wherein after the first word line is used, the memory controlling circuit unit continues to use a third word line among the word lines of the first physical erasing unit to store the first data,
• wherein the first word line is not adjacent to the third word line.