Nonvolatile semiconductor memory device and method of manufacturing nonvolatile semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorsNaoya KAMI, Kazunori Masuda, Yuuichi Tatsumi, Naoyuki Kondo, Masato Endo, Yukio Nishida
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes first word lines equipped with flag-like portions on one side of the block in the row direction and equipped with no flag-like portions on the other side of the block in the row direction, and second word lines equipped with no flag-like portions on the one side of the block in the row direction and equipped with flag-like portions on the other side of the block in the row direction.
Claims20
A nonvolatile semiconductor memory device comprising:
- a block formed with NAND cells arrayed in a row direction, each of the NAND cells including memory cells connected in series in a column direction;
- and
- a section formed with flag-like portions that make contacts with word lines of the memory cells,
- wherein the word lines include
- first word lines equipped with flag-like portions on one side of the block in the row direction and equipped with no flag-like portions on the other side of the block in the row direction, and
- second word lines equipped with no flag-like portions on the one side of the block in the row direction and equipped with flag-like portions on the other side of the block in the row direction, and
- wherein the flag-like portions of the first word lines are arranged at positions more distant from the block as compared with end portions of the second word lines, which include no flag-like portions, on the one side of the block in the row direction, and
- the flag-like portions of the second word lines are arranged at positions more distant from the block as compared with end portions of the first word lines, which include no flag-like portions, on the other side of the block in the row direction.
A nonvolatile semiconductor memory device comprising:
- a block formed with NAND cells arrayed in a row direction, each of the NAND cells including memory cells connected in series in a column direction, and a word line being shared with the memory cells in a same row,
- wherein the word lines include
- first word lines equipped with contacts on one side of the block in the row direction and equipped with no contacts on the other side of the block in the row direction, and
- second word lines equipped with no contacts on the one side of the block in the row direction and equipped with contacts on the other side of the block in the row direction, and
- wherein end portions equipped with contacts of the first word lines are arranged at positions more distant from the block as compared with end portions equipped with no contacts of the second word lines on the one side of the block in the row direction, and
- end portions equipped with contacts of the second word lines are arranged at positions more distant from the block as compared with end portions equipped with no contacts of the first word lines on the other side of the block in the row direction.
A method of manufacturing a nonvolatile semiconductor memory device, which includes a block formed with NAND cells arrayed in a row direction, each of the NAND cells including memory cells connected in series in a column direction, and a section formed with word line led out portions that make contacts with word lines of the memory cells, the method comprising:
- providing the word lines with a bent part having a line width corresponding to word line led out portions and with a bent part having a line width smaller than that of the word line led out portions, on each of opposite sides of the block in the row direction, such that the former bent part is formed by extending word lines outward along an outer periphery of the latter bent part.
Dependencies are inferred from the claim text.