Method and apparatus for providing multi-page read and write using sram and nonvolatile memory devices

A method for programming nonvolatile memory cell in a memory device, comprising:

• activating a first drain select gate (“DSG”) signal at a first DSG allowing an output terminal of a static random-access memory (“SRAM”) to be connected to a first nonvolatile memory string;
• driving one of first world lines (“WLs”) connected to nonvolatile memory cells of the first nonvolatile memory string to a programming voltage and driving remaining first WLs to pass voltages;
• and
• deactivating the first DSG signal at the first DSG to logically disconnect the first nonvolatile memory string from the SRAM while programming nonvolatile memory cell in the first nonvolatile memory string continues.

A memory device operable to store information, comprising:

• a random-access memory (“RAM”) array organized in multiple rows and multiple columns, the columns of the RAM array configured to couple to a plurality of RAM bit lines (“BLs”) operable to access BL data of a RAM page;
• a nonvolatile memory (“NVM”) array organized in multiple rows and multiple columns, the columns of the NVM array configured to couple to a plurality of NVM BLs operable to access BL data of a NVM page;
• and
• a switch circuit coupled to the RAM array and configured to control connection between the plurality of RAM BLs and the plurality of NVM BLs for data storage from the RAM array to the NVM array.

A method for storing information in a memory device, comprising:

• turning on switch circuit to connect at least a portion of random-access memory (“RAM”) bit lines (“BLs”) to a portion of nonvolatile memory (“NVM”) BLs;
• activating a page buffer to load data from a RAM via the RAM BLs and NVM BLs;
• activating a NVM programming cycle to write data in the page buffer to a plurality of NVM cells in a NVM;
• and
• turning off switch circuit to disconnect at least a portion of RAM BLs from a portion of NVM BLs while the NVM programming cycle continues.