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US 2016/0078935 A1Published application
Semiconductor integrated circuit
AssigneeKabushiki Kaisha Toshiba
InventorKoichiro ZAITSU
Life of this patent
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Abstract
A semiconductor integrated circuit includes: first and second wiring lines; resistive change memories disposed intersection regions of the first and second wiring lines; and a control circuit controlling the first and second drivers to select one of the first wiring lines and one of the second wiring lines, the control circuit changing a resistance of the selected one of the resistive change memories from the first resistive state to the third resistive state, and then changing the resistive state of the selected one of the resistive change memories from the third resistive state to the second resistive state.
Claims20
A semiconductor integrated circuit comprising:
- a plurality of first wiring lines;
- a plurality of second wiring lines crossing the first wiring lines;
- a plurality of resistive change memories disposed at intersection regions of the first wiring lines and the second wiring lines, the resistive change memories each including a first electrode connected to a corresponding one of the first wiring lines, a second electrode connected to a corresponding one of the second wiring lines, and a resistive change layer disposed between the first electrode and the second electrode, a resistance between the first electrode and the second electrode being changeable among a first resistive state, a second resistive state, and a third resistive state, the second resistive state having a resistance greater than a resistance of the first resistive state, the third resistive state having a resistance lower than the resistance of the first resistive state, the resistive change memories having a first memory state in which the resistance between the first electrode and the second electrode is in the first resistive state, and a second memory state in which the resistance between the first electrode and the second electrode is in the second resistive state;
- a first driver configured to drive the first wiring lines;
- a second driver configured to drive the second wiring lines;
- and
- a control circuit configured to control the first driver and the second driver,
- the control circuit controlling the first driver and the second driver to select one of the first wiring lines and one of the second wiring lines for selecting one of the resistive change memories, and to program the selected one of the resistive change memories from the first memory state to the second memory state through the third resistive state.
5 more elements
A semiconductor integrated circuit comprising:
- a plurality of first wiring lines;
- a plurality of second wiring lines crossing the first wiring lines;
- a plurality of resistive change memories disposed at intersection regions of the first wiring lines and the second wiring lines, the resistive change memories each including a first electrode connected to a corresponding one of the first wiring lines, a second electrode connected to a corresponding one of the second wiring lines, and a resistive change layer disposed between the first electrode and the second electrode, a resistance between the first electrode and the second electrode being changeable from one of a first resistive state and a second resistive state to the other, the second resistive state having a resistance greater than a resistance of the first resistive state;
- a first driver configured to drive the first wiring lines;
- a second driver configured to drive the second wiring lines;
- a current limitation circuit included in one of the first driver and the second driver, the current limitation circuit including a first current-limiting element with a first resistance, and a second current-limiting element with a second resistance that is less than the first resistance;
- and
- a control circuit configured to control the first driver and the second driver,
- the control circuit controlling the first driver and the second driver to select one of the first wiring lines and one of the second wiring lines for selecting one of the resistive change memories, and
- when programming the selected one of the resistive change memories from the first resistive state to the second resistive state, the control circuit connecting a first terminal of the first current-limiting element to one of the selected one of the first wiring lines and the selected one of the second wiring lines and applying a voltage between a second terminal of the first current-limiting element and the other of the selected one of the first wiring lines and the selected one of the second wiring lines, and thereafter, connecting a first terminal of the second current-limiting element to the one of the selected one of first wiring lines and the selected one of the second wiring lines, and applying a voltage between a second terminal of the second current-limiting element and the other of the selected one of first wiring lines and the selected one of the second wiring lines.
7 more elements
A semiconductor integrated circuit comprising:
- a plurality of first wiring lines;
- a plurality of second wiring lines crossing the first wiring lines;
- a plurality of resistive change memories disposed at intersection regions of the first wiring lines and the second wiring lines, the resistive change memories each including a first electrode connected to a corresponding one of the first wiring lines, a second electrode connected to a corresponding one of the second wiring lines, and a resistive change layer disposed between the first electrode and the second electrode, a resistance between the first electrode and the second electrode being changeable from one of a first resistive state and a second resistive state to the other, the second resistive state having a resistance greater than a resistance of the first resistive state;
- a first driver configured to drive the first wiring lines;
- a second driver configured to drive the second wiring lines;
- a current limitation circuit included in one of the first driver and the second driver, the current limitation circuit including a first current-limiting element with a first resistance, a second current-limiting element with a second resistance that is less than the first resistance, and a third current-limiting element with a third resistance that is greater than the first resistance;
- and
- a control circuit configured to control the first driver and the second driver,
- the control circuit controlling the first driver and the second driver to select one of the first wiring lines and one of the second wiring lines for selecting one of the resistive change memories, and
- the control circuit selects one of the first current-limiting element, the second current-limiting element, and the third current-limiting element, and connects a first terminal of the selected one of the current-limiting elements to one of the selected one of the first wiring lines and the selected one of the second wiring lines.
7 more elements
Dependencies are inferred from the claim text.