Semiconductor integrated circuit
AssigneeKabushiki Kaisha Toshiba
InventorsHaiyang PENG, Koichiro ZAITSU, Shinichi YASUDA
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Abstract
According to one embodiment, a semiconductor integrated circuit includes a memory cell including first and second electrodes and a resistance change film therebetween, and a control circuit controlling a potential difference between the first and second electrodes. The control circuit reversibly changes the memory cell to a first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode. The control circuit reversibly changes the memory cell to a second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode.
Claims21
A semiconductor integrated circuit comprising:
- a memory cell including first and second electrodes and a resistance change film therebetween, the resistance change film being reversibly changeable between first and second resistive states;
- and
- a control circuit controlling a potential difference between the first and second electrodes,
- wherein the control circuit reversibly changes the memory cell to the first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode,
- the control circuit reversibly changes the memory cell to the second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode, and
- the control circuit irreversibly fixes the memory cell to a third resistive state by applying a fifth potential to the first electrode and by applying a sixth potential greater than the fifth potential to the second electrode.
A semiconductor integrated circuit comprising:
- a memory cell including first and second electrodes and a resistance change film therebetween, the resistance change film being reversibly changeable between first and second resistive states;
- and
- a control circuit controlling a potential difference between the first and second electrodes,
- wherein the control circuit reversibly changes the memory cell to the first resistive state by applying a first potential to the first electrode and by applying a second potential smaller than the first potential to the second electrode,
- the control circuit reversibly changes the memory cell to the second resistive state by applying a third potential to the first electrode and by applying a fourth potential smaller than the third potential to the second electrode, and
- the control circuit irreversibly fixes the memory cell to a third resistive state by applying a fifth potential to the first electrode and by applying a sixth potential smaller than the fifth potential to the second electrode.
Dependencies are inferred from the claim text.