Memory device and method for manufacturing the same

A memory device, comprising:

• a substrate;
• a first wiring line layer being disposed above the substrate, the first wiring line layer including:
• a first wiring line extending in a first direction;
• and
• a second wiring line extending in the first direction, the first wiring line and the second wiring line being separated from each other;
• a second wiring line layer including:
• a third wiring line, at least one portion of the third wiring line extending in a second direction crossing the first direction;
• and
• a fourth wiring line, at least one portion of the fourth wiring line extending in the second direction;
• a third wiring line layer being disposed above the first wiring line layer, the third wiring line layer including:
• a fifth wiring line extending in the second direction;
• and
• a sixth wiring line extending in the second direction, the fifth wiring line and the sixth wiring line being separated from each other;
• a first memory element connected between the first wiring line and the fifth wiring line;
• a second memory element connected between the first wiring line and the sixth wiring line;
• a third memory element connected between the second wiring line and the fifth wiring line;
• a fourth memory element connected between the second wiring line and the sixth wiring line;
• a first interconnect connected between a side surface of the first wiring line and a side surface of the third wiring line;
• and
• a second interconnect connected between a side surface of the second wiring line and a side surface of the fourth wiring line.

A method for manufacturing a memory device, comprising:

• forming an inter-layer insulating film on a substrate;
• forming a first wiring line on the inter-layer insulating film, at least one portion of the first wiring line extending in a first direction;
• forming an insulating film on the first wiring line;
• forming a second wiring line and a third wiring line in an upper layer portion of the insulating film, the second wiring line and the third wiring line extending in a second direction crossing the first direction;
• making an opening in a portion of the insulating film including a region directly above the first wiring line between the second wiring line and the third wiring line;
• separating the first wiring line into two portions by removing a portion of the first wiring line positioned at a region directly under the opening;
• forming a conductive film on a side surface of the opening to contact a side surface of the second wiring line, a side surface of the third wiring line, and a pair of separated mutually-opposed side surfaces of the first wiring line;
• and
• separating the conductive film into a portion contacting the second wiring line and a portion contacting the third wiring line by removing a portion of the conductive film.