Semiconductor memory device

A sense amplifier section, comprising:

• a plurality of first diffusion layers that are formed over a semiconductor layer and disposed at predetermined intervals in a first direction,
• a plurality of second diffusion layers that are formed over the semiconductor layer, isolated from the first diffusion layers in a second direction orthogonal to the first direction, and disposed at the predetermined intervals in the first direction,
• a plurality of first regions that have a predetermined width in the first direction for separating the first diffusion layers from each other,
• a plurality of second regions that align with the first regions in the second direction and have the predetermined width for separating the second diffusion layers from each other, and
• a plurality of contacts that are formed over the first diffusion layers and over the second diffusion layers.

A method of forming a semiconductor device, comprising:

• forming a plurality of first diffusion layers over a semiconductor layer and being disposed at predetermined intervals in a first direction,
• forming a plurality of second diffusion layers over the semiconductor layer, isolated from the first diffusion layers in a second direction orthogonal to the first direction, and being disposed at the predetermined intervals in the first direction,
• separating, by a plurality of first regions that have a predetermined width in the first direction, the first diffusion layers from each other,
• providing a plurality of second regions that align with the first regions in the second direction and have the predetermined width for separating the second diffusion layers from each other,
• forming a plurality of contacts over the first diffusion layers and over the second diffusion layers;
• and
• forming a plurality of gates that are long in the second direction, over the semiconductor layer exposed by the first regions.