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US 2016/0078915 A1Published application
Resistance change memory
OwnerAkira KATAYAMAinventor
Life of this patent
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Abstract
According to one embodiment, according to one embodiment, a resistance change memory includes a memory cell, a sense amplifier, a control circuit and a storage unit. The memory cell includes a resistance change element. The sense amplifier compares a reference current with a cell current flowing through the memory cell. The control circuit calculates offset information of the reference current. The storage unit is provided for the sense amplifier and stores the offset information. The storage unit corresponds to the sense amplifier one to one.
Claims21
A resistance change memory comprising:
- a memory cell comprising a resistance change element;
- a sense amplifier which compares a reference current with a cell current flowing through the memory cell;
- a control circuit which calculates offset information of the reference current;
- and
- a storage unit which is provided for the sense amplifier and stores the offset information, the storage unit corresponding to the sense amplifier one to one.
2 more elements
A resistance change memory comprising:
- a memory cell comprising a resistance change element;
- a sense amplifier which compares a reference current with a cell current flowing through the memory cell;
- and
- a nonvolatile storage unit which is provided for the sense amplifier and stores an offset information of the reference current, the nonvolatile storage unit corresponding to the sense amplifier one to one.
1 more element
Dependencies are inferred from the claim text.