Semiconductor memory device and driving method thereof

A driving method of a semiconductor memory device, the semiconductor memory device having a stacked body, in which a first electrode film, a second electrode film, a third electrode film are stacked in this order via insulating films, a first semiconductor pillar extending in a stacking direction of the first electrode film, the second electrode film, and the third electrode film and provided in the stacked body, and a memory film provided on a side surface of the first semiconductor pillar and capable of charges, an angel formed by a surface on the third electrode film side of the second electrode film and the side surface of the first semiconductor pillar being acute angle in case viewed from one direction orthogonal to the stacking direction,

• the driving method comprising applying a first voltage to the third electrode film, the first voltage being lower than a second voltage applied to the first electrode film, in case applying a program voltage to the second electrode film to inject charges from the first semiconductor pillar to a portion of the memory film located between the first semiconductor pillar and the second electrode film.