Method of simulating formation of lithography features by self-assembly of block copolymers

A method of forming a pattern of features on a substrate with the use of a self-assembly block copolymer, the method comprising:

• simulating a block copolymer feature, wherein the simulated block copolymer feature comprises a first domain comprising a first polymer type and a second domain comprising a second polymer type;
• calculating a minimum energy position of the first domain within simulated the block copolymer feature, wherein the minimum energy position is the position of the first domain at a first energy state of the block copolymer feature, the first energy state being substantially a minimum energy;
• simulating the application of a potential to the block copolymer feature, wherein the potential causes the position of the first domain to be displaced from the minimum energy position;
• simulating release of the potential, thereby allowing the energy of the block copolymer feature to relax to substantially the minimum energy;
• recording a plurality of energies of the block copolymer feature as the block copolymer feature relaxes to substantially the minimum energy;
• recording at each of the plurality of energies a displacement of the first domain from the minimum energy position;
• calculating, from the recorded energies of the block copolymer feature and the recorded displacements of the first domain, a probability distribution indicating a probability of the first domain being displaced from the minimum energy position;
• calculating, from the probability distribution, an uncertainty in the position of the first domain within the block copolymer feature;
• using the uncertainty in the position of the first domain within the self-assembly block copolymer feature to design a pattern of features;
• and
• forming the pattern of features on the substrate according to the design.