Method of controlling nonvolatile memory
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi YAO, Hiroshi SUKEGAWA, Tokumasa HARA
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Abstract
According to an embodiment, The control method includes reading a plurality of first pages in parallel on the basis of respectively different operation parameters. each of the first pages is respectively included in a plurality of first blocks. Each of the operation parameters includes a read voltage. The control method includes performing error correction on each of read data, and selecting one operation parameter out of the plurality of different operation parameters based on a result of the error correction.
Claims20
A method of controlling a nonvolatile memory including a plurality of blocks, each of the blocks being a unit of data erasing, each of the blocks including a plurality of pages, each of the pages being a unit of data writing and reading, the method comprising:
- reading a plurality of first pages in parallel based on respectively different operation parameters, each of the first pages being respectively included in a plurality of first blocks, each of the operation parameters including a read voltage, and
- performing error correction on each of read data, and selecting one operation parameter out of the plurality of different operation parameters based on a result of the error correction.
A method of controlling a nonvolatile memory including a plurality of physical blocks, each of the physical blocks including a plurality of pages, the control method comprising:
- selecting one page out of each of the plurality of first physical blocks, setting respectively different operation parameters for the plurality of selected pages, and reading data from the plurality of pages in parallel, the operation parameters including a read voltage;
- performing error correction on the read data of the plurality of pages and selecting one operation parameter out of the plurality of operation parameters based on a result of the error correction;
- and
- performing reading on a page within a second physical block by using the selected one operation parameter.
A method of controlling nonvolatile memory including a plurality of physical blocks, each of the physical blocks including a plurality of pages, the method comprising:
- performing error correction on page data read from a first physical block, and selecting operation parameters for the first physical block based on a result of the error correction, the operation parameters including a read voltage;
- and
- applying the selected operation parameters to read processing of the second physical block.
Dependencies are inferred from the claim text.