High voltage failure recovery for emulated electrically erasable (eee) memory system

A method for managing failing sectors in a semiconductor memory device that includes a volatile memory, a non-volatile memory, and a memory controller coupling the volatile memory and the non-volatile memory, the method comprising:

• receiving a record address and a read control signal, wherein
• the record address identifies a location in the non-volatile memory;
• comparing the record address with a plurality of dead sector addresses, wherein
• the dead sector addresses correspond to a subset of sectors located in the non-volatile memory;
• and
• determining that data located at the record address is invalid in response to a combination of a first detection that the record address matches one of the dead sector addresses and a second detection that the read control signal indicates a read operation is requested to be performed on the non-volatile memory.

A computer processing system comprising:

• a volatile memory;
• a non-volatile memory including a plurality of sectors, each of the plurality of sectors configured to store one or more data records;
• and
• a control module coupled to the non-volatile memory and the volatile memory, the control module is configured to
• receive a record address and a read control signal, wherein
• the record address identifies a location in the non-volatile memory,
• compare the record address with a plurality of dead sector addresses, wherein
• the dead sector addresses correspond to a set of sectors located in the non-volatile memory, and
• generate a memory control signal that is active in response to a combination of a first detection that the record address matches one of the dead sector addresses and a second detection that the read control signal indicates a read operation is requested to be performed on the non-volatile memory, wherein
• the memory control signal that is active indicates that data located at the record address is invalid.