Methods and devices for detecting unsaturated compounds
AssigneeThe University of Toledo
InventorsAbdul-Majeed AZAD, Desikan SUNDARARAJAN, Robert Howard KINNER
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Abstract
An insulated-gate field-effect transistor comprising a semiconductor substrate, a source region, a drain region, where the source region is spaced apart from the drain region to thereby form a channel, and both the source region and the drain region are located at or near one surface of the substrate, a gate insulator deposited over said channel, and a gate electrode, said gate electrode including a material that demonstrates appreciable change in resistivity relative to the concentration of acetylene, where the gate electrode covers the gate insulator.
Claims21
An insulated-gate field-effect transistor comprising:
- (i) a semiconductor substrate;
- (ii) a source region;
- (iii) a drain region, where the source region is spaced apart from the drain region to thereby form a channel, and both the source region and the drain region are located at or near one surface of the substrate;
- (iv) a gate insulator deposited over said channel;
- and
- (v) a gate electrode, said gate electrode including a material that demonstrates appreciable change in resistivity relative to the concentration of acetylene, where the gate electrode covers the gate insulator.
A method for fabricating an acetylene sensor, the method comprising:
- (i) providing an inert substrate;
- (ii) placing at least a pair of electrodes onto the surface of said substrate;
- (iii) providing a solution that includes a material that demonstrates appreciable change in resistivity relative to the concentration of the acetylene;
- (iv) depositing the solution onto the substrate to at least partially cover said electrodes;
- and
- (v) heating the substrate having the solution deposited thereon to thereby remove solvents associated with said solution.
A power transformer comprising an acetylene sensor, the acetylene sensor comprising a substrate, electrodes, and a sensor layer, where the electrical properties of the substrate do not change based upon any reaction or interaction with acetylene, and where the sensor layer includes a material that undergoes and appreciable change in resistivity based upon reaction or interaction with acetylene.
Dependencies are inferred from the claim text.