# US 2016/0064191 A1 · Ion control for a plasma source > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2016/0064191 A1 - Document ID: US20160064191A1 - Status: Published application - Kind: A1 - Application number: 14/939,759 - Filed: 2015-11-12 - Published: 2016-03-03 - Earliest claimed: 2012-07-05 - Assignees: Sputtering Components, Inc. - Applicants: Sputtering Components, Inc. - Inventors: Patrick Lawrence Morse - Web page: https://patentgrep.com/patent/US20160064191A1 ## CPC - H01J 37/32055: {Arc discharge} - C23C 14/3485: {using pulsed power to the target} - C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} - H01J 37/32: Gas-filled discharge tubes (heating by discharge H05B) - H01J 37/32027: {DC powered} - H01J 37/32146: {Amplitude modulation, includes pulsing} - H01J 37/3405: {Magnetron sputtering} - H05H 1/50: and using applied magnetic fields, e.g. for focusing or rotating the arc - H05H 2242/22: DC, AC or pulsed generators - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS ## Abstract One embodiment is directed to an apparatus including a plasma source and operation electronics coupled to the plasma source. The plasma source includes at least two electrodes configured to generate plasma. The operation electronics are configured to generate plasma with the at least two electrodes and apply an ion flux modification bias to the at least two electrodes. ## Claims ### Claim 1 An apparatus comprising: a plasma source including at least two electrodes configured to generate plasma; electronics coupled to the plasma source, the electronics configured to: generate plasma with the at least two electrodes; and apply an ion flux modification bias to the at least two electrodes. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein apply an ion flux modification bias includes apply a positive voltage to the at least two electrodes concurrently. ### Claim 3 (depends on 1) The apparatus of claim 1, wherein apply an ion flux modification bias includes apply a negative voltage to the at least two electrodes concurrently. ### Claim 4 (depends on 1) The apparatus of claim 1, wherein generate plasma includes alternate a first of the at least two electrodes between being biased as a cathode and being biased as an anode, and alternate a second of the at least two electrodes between being biased as an anode and being biased as a cathode, wherein the second electrode is biased as an anode while the first electrode is biased as a cathode and the second electrode is biased as a cathode while the first electrode is biased as an anode. ### Claim 5 (depends on 1) The apparatus of claim 1, wherein the electronics are configured to apply one or more ion flux modification biases after generating plasma, and to repeat generating plasma and applying one or more ion flux modification biases one or more times. ### Claim 6 (depends on 1) The apparatus of claim 1, wherein the electronics include a switching unit coupled to the at least two electrodes, and one or more direct current power supplies coupled to the switching unit. ### Claim 7 (depends on 1) The apparatus of claim 1, comprising: one or more secondary electrodes coupled to the electronics, wherein the electronics are configured to bias the one or more secondary electrodes with a negative voltage during a positive ion flux modification bias and to bias the one or more secondary electrodes with a positive voltage during a negative ion flux modification bias. ### Claim 8 (depends on 1) The apparatus of claim 1, wherein the at least two electrodes are part of a plasma source that is configured to output plasma from a discharge aperture of a cavity or are part of a sputter magnetron. ### Claim 9 A method of controlling a plasma source having at least two electrodes configured to generate plasma, the method comprising: generating plasma with the at least two electrodes; and applying an ion flux modification bias to the at least two electrodes. ### Claim 10 (depends on 9) The method of claim 9, wherein applying an ion flux modification bias includes applying a positive voltage to the at least two electrodes concurrently. ### Claim 11 (depends on 9) The method of claim 9, wherein applying an ion flux modification bias includes applying a negative voltage to the at least two electrodes concurrently. ### Claim 12 (depends on 9) The method of claim 9, wherein generating plasma includes: alternating a first of the at least two electrodes between being biased as a cathode and being biased as an anode, and alternating a second of the at least two electrodes between being biased as an anode and being biased as a cathode, wherein the second electrode is biased as an anode while the first electrode is biased as a cathode and the second electrode is biased as a cathode while the first electrode is biased as an anode. ### Claim 13 (depends on 9) The method of claim 9, comprising: applying one or more ion flux modification biases after generating plasma; and repeating the acts of generating plasma and applying one or more ion flux modification biases one or more times. ### Claim 14 (depends on 9) The method of claim 9, comprising: biasing one or more secondary electrodes with a negative voltage during a positive ion flux modification bias and biasing the one or more secondary electrodes with a positive voltage during a negative ion flux modification bias. ### Claim 15 An electrical circuit for a plasma source, the electrical circuit comprising: a switching unit configured to couple to at least two electrodes of the plasma source, the at least two electrodes configured to generate plasma; and a controller coupled to the switching unit, wherein the controller is configured to control the switching unit to: generate plasma with the at least two electrodes; and apply an ion flux modification bias to the at least two electrodes. ### Claim 16 (depends on 15) The electrical circuit of claim 15, wherein apply an ion flux modification bias includes apply a positive voltage to the at least two electrodes concurrently. ### Claim 17 (depends on 15) The electrical circuit of claim 15, wherein apply an ion flux modification bias includes apply a negative voltage to the at least two electrodes concurrently. ### Claim 18 (depends on 15) The electrical circuit of claim 15, wherein generate plasma includes alternate a first of the at least two electrodes between being bias as a cathode and being biased as an anode, and alternate a second of the at least two electrodes between being biased as an anode and being biased as a cathode, wherein the second electrode is biased as an anode while the first electrode is biased as an cathode and the second electrode is biased as a cathode while the first electrode is biased as an anode. ### Claim 19 (depends on 15) The electrical circuit of claim 15, wherein the controller is configured to apply one or more ion flux modification biases after generating plasma, and to repeat generating plasma and applying one or more ion flux modification biases one or more times. ### Claim 20 (depends on 15) The electrical circuit of claim 15, wherein the controller is configured to bias one or more secondary electrodes of the plasma source with a negative voltage during a positive ion flux modification bias and to bias the one or more secondary electrodes with a positive voltage during a negative ion flux modification bias.