US 2016/0027986 A1 · THERMOELECTRIC ELEMENT, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

Abstract

A thermoelectric element is provided as follows. First and second semiconductor fin structures are disposed on a semiconductor substrate. Each semiconductor fin structure extends in a first direction, protruding from the semiconductor substrate. First and second semiconductor nanowires are disposed on the first and second semiconductor fin structures, respectively. The first semiconductor nanowires include first impurities. The second semiconductor nanowires include second impurities different from the first impurities. A first electrode is connected to first ends of the first and second semiconductor nanowires. A second electrode is connected to second ends of the first semiconductor nanowires. A third electrode is connected to second ends of the second semiconductor nanowires.

Claims24

Dependent claims

A thermoelectric element comprising:

a semiconductor substrate;
a plurality of first semiconductor fin structures and a plurality of second semiconductor fin structures disposed on the semiconductor substrate, each of the first and second semiconductor fin structures extending in a first direction and protruding from the semiconductor substrate;
a plurality of first semiconductor nanowires disposed on the first semiconductor fin structures, the first semiconductor nanowires including first impurities;
a plurality of second semiconductor nanowires disposed on the second semiconductor fin structures, the second semiconductor nanowires including second impurities different from the first impurities;
a first electrode connected to first ends of the first semiconductor nanowires and first ends of the second semiconductor nanowires;
a second electrode connected to second ends of the first semiconductor nanowires;
and
a third electrode connected to second ends of the second semiconductor nanowires.

5 more elements

A semiconductor device comprising:

a first semiconductor die including a first thermoelectric element;
and
a second semiconductor die disposed on the first semiconductor die, the second semiconductor die including a first area and a second area,
the first thermoelectric element comprising:
a plurality of first semiconductor nanowires extending in a first direction and including first impurities;
a plurality of second semiconductor nanowires extending in the first direction and including second impurities different from the first impurities;
a first electrode connected to first ends of the first semiconductor nanowires and first ends of the second semiconductor nanowires, wherein the first electrode is disposed on the first region of the second semiconductor die;
a second electrode connected to second ends of the first semiconductor nanowires;
and
a third electrode connected to second ends of the second semiconductor nanowires, wherein the second and third electrodes are disposed on the second region of the second semiconductor die.

7 more elements

Dependencies are inferred from the claim text.

Thermoelectric element, method of manufacturing the same and semiconductor device including the same

Life of this patent

Thermoelectric element, method of manufacturing the same and semiconductor device including the same

Life of this patent

Abstract

Claims24