Mask for photolithography, method for fabricating the same and method for manufacturing semiconductor device using the mask

A method of manufacturing a semiconductor device comprising:

• providing a wafer comprising an object layer;
• coating a photoresist layer on the object layer;
• exposing the photoresist layer to a light source through a photo mask;
• developing the photoresist layer to form a photoresist pattern;
• and
• etching the object layer to form an object layer pattern using the photoresist pattern as an etch mask, wherein the photo mask comprises,
• a substrate;
• and
• a main pattern and a sub pattern formed on the substrate,
• wherein the main pattern comprises a partially transparent phase shift material and the sub pattern comprises an opaque material.

A method of manufacturing a semiconductor device comprising:

• coating a photoresist layer on a wafer substrate;
• exposing the photoresist layer to a light source through a photo mask;
• developing the photoresist layer to form a photoresist pattern;
• and
• performing an etch corresponding to the photoresist pattern,
• wherein the photo mask comprises,
• a photo mask substrate;
• a partially transparent pattern formed on the photo mask substrate and blocking at least half of light irradiated on the partially transparent pattern to form a shade behind the partially transparent pattern by a light irradiation;
• and
• a sub resolution assist feature formed on the photo mask substrate,
• wherein the partially transparent pattern comprises a phase shift material and the sub resolution assist feature comprises an opaque material.