# US 2016/0002096 A1 · Silicon and silica nanostructures and method of making silicon and silica nanostructures

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- Number: US 2016/0002096 A1
- Document ID: US20160002096A1
- Status: Published application
- Kind: A1
- Application number: 14/750,047
- Filed: 2015-06-25
- Published: 2016-01-07
- Earliest claimed: 2014-07-02
- Assignees: Corning Incorporated; Icfo
- Applicants: Corning Incorporated; Icfo
- Inventors: Albert Carrilero; Prantik Mazumder; Valerio Pruneri
- Web page: https://patentgrep.com/patent/US20160002096A1

## CPC

- C03C 15/00: Surface treatment of glass, not in the form of fibres or filaments, by etching (etching or surface-brightening compositions, in general C09K13/00)
- C01B 33/12: Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C30B 11/12: Vaporous components, e.g. vapour-liquid-solid-growth
- C30B 29/06: Silicon
- C30B 29/18: Quartz
- C30B 29/60: characterised by shape
- C30B 29/602: {Nanotubes}
- C01P 2004/13: Nanotubes
- C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.

## Claims

### Claim 1

A composition comprising
one or more silicon nanostructures; and
a silica-containing glass substrate, the silica-containing glass substrate comprising one or more nanopillars;
wherein the silicon nanostructures extend from the nanopillars of the silica-containing glass substrate; and
wherein the silicon nanostructures comprise one or more nanotubes.

### Claim 2 (depends on 1)

The composition of claim 1, wherein the silica-containing glass substrate is fused silica glass.

### Claim 3 (depends on 1)

The composition of claim 1, wherein the silicon nanostructures have external diameters between about 30 nm and about 200 nm.

### Claim 4 (depends on 1)

The composition of claim 1, wherein the silicon nanostructures have lengths between about 50 nm and about 2000 nm.

### Claim 5 (depends on 1)

The composition of claim 1, wherein the silicon nanostructures have a surface density on the silica-containing glass substrate of at least 1010 cm−2.

### Claim 6 (depends on 1)

The composition of claim 1, wherein the silicon nanostructures also comprise nanowires.

### Claim 7 (depends on 1)

A method for preparing the composition of claim 1, the method comprising the steps of:
providing one or more metal nanoparticles on the silica-containing glass substrate; and
performing reactive ion etching of the silica-containing glass substrate under conditions suitable for the formation of the one or more silicon nanostructures.

### Claim 8 (depends on 7)

The method of claim 7, wherein the metal nanoparticles are metal dewetted particles.

### Claim 9 (depends on 7)

The method of claim 7, wherein the metal nanoparticles have an average lateral cross-section between about 30 nm and about 200 nm.

### Claim 10 (depends on 7)

The method of claim 7, wherein the reactive ion etching is performed at a temperature less than 300° C.

### Claim 11 (depends on 7)

The method of claim 7, wherein the reactive ion etching is performed at a temperature less than 100° C.

### Claim 12

A composition comprising:
one or more silica nano structures; and
a silica-containing glass substrate, the silica-containing glass substrate comprising one or more nanopillars;
wherein the silica nanostructures extend from the nanopillars of the silica-containing glass substrate; and
wherein the silica nanostructures comprise one or more nanotubes.

### Claim 13 (depends on 12)

The composition of claim 12, wherein the silica nanostructures also comprise nanowires.

### Claim 14 (depends on 12)

The composition of claim 12, wherein the silica nanostructures are substantially transparent.

### Claim 15 (depends on 12)

The composition of claim 12, wherein the silica nanostructures have external diameters between about 30 nm and about 200 nm.

### Claim 16 (depends on 12)

The composition of claim 12, wherein the silica nanostructures have lengths between about 50 nm and about 2000 nm.

### Claim 17 (depends on 12)

A method for preparing the composition of claim 12, the method comprising the steps of:
providing one or more metal nanoparticles on a silica-containing glass substrate;
performing reactive ion etching of the silica-containing glass substrate under conditions suitable for the formation of silicon nanostructures comprising silicon nanotubes; and
oxidizing the silicon nanostructures to form the one or more silica nanostructures.

### Claim 18

A method for preparing a silica nanotube comprising the steps of:
providing one or more metal nanoparticles on a silica-containing glass substrate;
performing reactive ion etching of the silica-containing glass substrate under conditions suitable for the formation of a silicon nanotube; and
oxidizing the silicon nanotube to form a silica nanotube.

### Claim 19 (depends on 18)

The method of claim 18 further comprising the step of removing the silicon nanotube from the silica-containing glass substrate prior to oxidation.

### Claim 20 (depends on 19)

A silica nanotube prepared by the method of claim 19.