Micromechanical system and method for manufacturing a micromechanical system
AssigneeInfineon Technologies Dresden GmbH
InventorsThoralf Kautzsch, Heiko Froehlich, Mirko Vogt, Maik Stegemann, Boris Binder
Life of this patent
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Abstract
A method for manufacturing a micromechanical system includes forming in a Front-End-of-Line (FEOL) process transistors in a transistor region; after the FEOL-process, forming a sacrificial layer; structuring the sacrificial layer to form a structured sacrificial layer; forming a functional layer at least partially covering the structured sacrificial layer; and removing the sacrificial layer to create a cavity.
Claims26
A method for manufacturing a micromechanical system, the method comprising:
- forming in a Front-End-of-Line (FEOL) process transistors in a transistor region;
- after the FEOL-process, forming a sacrificial layer;
- structuring the sacrificial layer to form a structured sacrificial layer;
- forming a functional layer at least partially covering the structured sacrificial layer;
- and
- removing the sacrificial layer to create a cavity.
A method for manufacturing a pressure sensor, comprising:
- forming a sacrificial layer at a surface of the semiconductor substrate;
- forming a functional layer covering the sacrificial layer;
- forming at least one hole and removing the sacrificial layer by applying a removing process through the at least one hole to create a cavity;
- providing a thermal treatment at a temperature between 550° C. to 750° C.;
- closing the at least one hole.
A micromechanical system, comprising:
- a semiconductor substrate;
- at least one transistor in a transistor region;
- at least one metal layer above the at least one transistor, a lower surface of the at least one metal layer having a first vertical level;
- and
- a functional MEMS layer in a MEMS region, the functional layer having an upper surface at a second vertical level which is lower than the first vertical level.
A method for manufacturing a micromechanical system, comprising:
- forming at least one transistor in a transistor region of a substrate;
- providing a structured sacrificial layer in a MEMS region of the substrate;
- forming a functional MEMS layer at least partially covering the structured sacrificial layer;
- providing etch holes in the functional MEMS layer;
- removing the sacrificial layer to create a cavity;
- forming a further layer closing the etch holes, wherein the further layer extends above at least a portion of the transistor region;
- and
- forming at least one metal layer.
Dependencies are inferred from the claim text.