Nitrogen-containing compounds for etching semiconductor structures
AssigneeAmerican Air Liquide, Inc.
InventorsVijay SURLA, Rahul Gupta, Venkateswara R. Pallem
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Abstract
A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C≡N or C═N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.
Claims20
A method for etching silicon-containing films, the method comprising the steps of:
- introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound comprises an organofluorine compound containing a C≡N or C═N functional group;
- introducing an inert gas into the reaction chamber;
- and
- activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.
A nitrogen containing etching compound comprising an organofluorine compound having a C≡N or C═N functional group.
Dependencies are inferred from the claim text.