Variable stiffness chassis for ultrathin devices

A method for providing an IHS chassis, comprising:

• providing a chassis base that includes at least ninety-five weight percent Aluminum;
• selectively doping the chassis base at an edge section, which extends around the circumference of the chassis base and that is located adjacent a center portion of the chassis base, with at least five weight percent of Lithium such that the center portion is not doped with the at least one second metal element;
• and
• heat treating the chassis base such that the center portion of the chassis base includes at least ninety-five weight percent of Aluminum and the edge portion of the chassis base includes at least five weight percent of Lithium.

A method for providing an IHS chassis, comprising:

• providing a chassis base that includes at least ninety-five weight percent Magnesium;
• selectively doping the chassis base at an edge section, which extends around the circumference of the chassis base and that is located adjacent a center portion of the chassis base, with at least five weight percent of Lithium such that the center portion is not doped with the at least one second metal element;
• and
• heat treating the chassis base such that the center portion of the chassis base includes at least ninety-five weight percent of Magnesium and the edge portion of the chassis base includes at least five weight percent of Lithium.