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US 2015/0318853 A1Published application
Gate Boosting Transmission Gate
AssigneeMicrosemi SoC Corporation
InventorJohn L. McCollum
Life of this patent
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Abstract
A gate-boosting transmission gate includes an input node and an output node. An n-channel transistor has a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the n-channel transistor having a low threshold. A p-channel transistor has a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the p-channel transistor having a very low threshold.
Claims3
A gate-boosting transmission gate comprising:
- an input node;
- an output node;
- an n-channel transistor having a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the n-channel transistor having a low threshold;
- and
- a p-channel transistor having a first source/drain terminal connected to the input node and a second source/drain terminal connected to the output node, the p-channel transistor having a very low threshold.
2 more elements
Dependencies are inferred from the claim text.