Semiconductor laser and method for producing a semiconductor laser comprising a feedback element
AssigneeNanoplus Nanosystems and Technologies GmbH
InventorsJohannes KOETH, Lars NÄHLE
Life of this patent
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Abstract
Embodiments relate to a semiconductor laser having a multilayer structure including a ridge and two material removal areas adjacent to the ridge on either side, the multilayer structure being arranged on a substrate and a layer expansion plane being defined by a surface of the substrate, the ridge having at least one active region and at least the active region being spatially limited by passages between the ridge and the material removal areas in one dimension of the layer expansion plane, the active region having a layer structure for forming an interband cascade laser.
Claims14
A semiconductor laser, comprising:
- a multilayer structure including a ridge and two material removal areas adjacent to the ridge on either side, the multilayer structure being arranged on a substrate and a layer expansion plane being defined by a surface of the substrate, the ridge having at least one active region and at least the active region being spatially limited by passages between the ridge and the material removal areas in one dimension of the layer expansion plane, the active region having a layer structure for forming an interband cascade laser,
- wherein at least in the material removal areas, an insulation layer and a superimposed grating structure layer are positioned, the insulation layer and the grating structure layer being arranged in the material removal areas such that the grating structure layer is arranged below, but not more than 100 nm below a bottom edge of the active region, and
- wherein the grating structure layer comprises a metal.
A method for producing a semiconductor laser comprising the method steps of:
- applying a multilayer structure onto a substrate, the layers of the multilayer structure running parallel to a layer expansion plane defined by a surface of the substrate and the application of the multilayer structure including at least the production of an active region having a layer structure for forming an interband cascade laser;
- removing material of the multilayer structure in two separate material removal areas, the material being removed substantially perpendicularly to the layer expansion plane and a ridge thus being formed that is separated from the material removal areas by passages such that at least the active region (10) is spatially limited by the passages in one dimension of the layer expansion plane;
- producing an insulation layer at least on the material removal areas;
- and
- applying a grating structure layer at least in the area of the material removal areas, the removal of material and the application of one or more of the insulation layer and of the grating structure layer being coordinated such that the grating structure layer is arranged below, but not more than 100 nm below a bottom edge of the active region, and wherein a metal is at least deposited and structured so as to produce the grating structure layer.
Dependencies are inferred from the claim text.