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US 2015/0318665 A1Published application
Thermal Shunt
AssigneeHewlett-Packard Development Company, L.P.
InventorDi Liang
Life of this patent
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Abstract
A thermal shunt is to transfer heat from a sidewall of a device to a silicon substrate. The device is associated with a Silicon-On-Insulator (SOI) including a buried oxide layer. The thermal shunt extends through the buried oxide layer to the silicon substrate.
Claims15
A device, comprising:
- a component disposed on a silicon device layer of a Silicon-On-Insulator (SOI), wherein the SOI includes a buried oxide layer sandwiched between the silicon device layer and a silicon substrate;
- and
- a thermal shunt to contact a part of the device and extend through the silicon device layer and buried oxide layer to the silicon substrate to transfer heat from the device to the silicon substrate.
An optical interconnect comprising:
- a photon generator bonded to a silicon device layer of a Silicon-On-Insulator (SOI) to resonate optical modes;
- a buried oxide layer sandwiched between the silicon device layer and a silicon substrate;
- and
- a thermal shunt to extend from the photon generator through the silicon device layer and the buried oxide layer to the silicon substrate, wherein the thermal shunt is proximate to a part of the photon generator to transfer heat from the part and substantially confine the resonated optical modes within the photon generator.
1 more element
A method of transferring heat from a Silicon-On-Insulator (SOI) device, comprising:
- passivating, using a thermal shunt material, a part of the device disposed on a silicon device layer of a Silicon-On-Insulator (SOI);
- and
- extending the thermal shunt material through the silicon device layer and a buried oxide layer of the SOI to a silicon substrate of the SOI, to transfer heat from the part of the device to the silicon substrate.
Dependencies are inferred from the claim text.