Tunneling nanotube field effect transistor and manufacturing method thereof

A tunneling field effect transistor comprising:

• an insulating layer disposed on a substrate;
• a gate electrode disposed on the insulating layer;
• a source electrode and a drain electrode disposed on the insulating layer on respective adjacent sides of the gate electrode;
• and
• a carbon nanotube surrounded by the source electrode, the gate electrode, and the drain electrode, wherein a first portion of the carbon nanotube has a first conductivity type and serves as a source region, and a second portion of the carbon nanotube has a second conductivity type and serves as a drain region.

A method of manufacturing a tunneling nanotube field effect transistor, comprising:

• forming an insulating layer on a substrate;
• forming a carbon nanotube above the insulating layer, wherein a portion of the carbon nanotube is supported and surrounded by a gate electrode;
• performing doping on the carbon nanotube such that a first portion of the carbon nanotube adjacent to the gate electrode has a first conductivity type and a second portion of the carbon nanotube adjacent to the gate electrode has a second conductivity type different from the first conductivity type;
• and
• forming a source electrode on the first portion and a drain electrode on the second portion, wherein the source electrode and the gate electrode are spaced apart by an exposed section of the first portion, and the drain electrode and the gate electrode are spaced apart by an exposed section of the second portion.