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US 2015/0318503 A1Published application
Field effect transistor and manufacturing method thereof
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorDeyuan XIAO
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Abstract
A field effect transistor is disclosed. The field effect transistor includes a substrate, a carbon nanotube formed above the substrate, a gate electrode formed on the substrate, wherein the gate electrode is formed surrounding a center portion of the carbon nanotube, and a source electrode and a drain electrode formed on the substrate, wherein the source electrode and the drain electrode are formed surrounding respective end portions of the carbon nanotube.
Claims18
A field effect transistor comprising:
- a substrate;
- a carbon nanotube formed above the substrate;
- a gate electrode formed on the substrate, wherein the gate electrode is formed surrounding a center portion of the carbon nanotube;
- and
- a source electrode and a drain electrode formed on the substrate, wherein the source electrode and the drain electrode are formed surrounding respective end portions of the carbon nanotube.
2 more elements
A method of manufacturing a field effect transistor, comprising:
- forming a carbon nanotube above a substrate;
- forming a gate electrode on the substrate, wherein the gate electrode is formed surrounding a center portion of the carbon nanotube;
- and
- forming a source electrode and a drain electrode on the substrate, wherein the source electrode and the drain electrode are formed surrounding respective end portions of the carbon nanotube.
1 more element
Dependencies are inferred from the claim text.