Transparent organic thin-film transistor and method for manufacturing same
AssigneeFuji Electric Co., Ltd.
InventorNaoyuki KANAI
Life of this patent
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Abstract
A highly transparent organic thin-film transistor that has superior transistor performance and can be applied to flexible devices includes: a transparent support substrate; a first gate electrode formed on the transparent support substrate; a second gate electrode formed on the first gate electrode; a polymeric gate-insulating layer formed on the second gate electrode; a source electrode and a drain electrode formed on the polymeric gate-insulating layer; and an organic semiconductor layer formed on the source electrode and the drain electrode.
Claims8
A transparent organic thin-film transistor comprising:
- a first gate electrode formed on a transparent support substrate, an inert metal being used in the first gate electrode;
- a second gate electrode formed on the first gate electrode, an active metal being used in the second gate electrode;
- a polymeric gate-insulating layer formed on the second gate electrode, a fluoropolymer being used in the polymeric gate-insulating layer;
- a source electrode and a drain electrode formed on the polymeric gate-insulating layer;
- and
- an organic semiconductor layer formed on the source electrode and the drain electrode.
A transparent organic thin-film transistor, characterized in comprising:
- a first gate electrode formed on a transparent support substrate, an inert metal being used in the first gate electrode;
- a second gate electrode formed on the first gate electrode, an active metal being used in the second gate electrode;
- a polymeric gate-insulating layer formed on the second gate electrode, a fluoropolymer being used in the polymeric gate-insulating layer;
- an organic semiconductor layer formed on the polymeric gate-insulating layer;
- and
- a source electrode and a drain electrode formed on the organic semiconductor layer.
A method for manufacturing a transparent organic thin-film transistor comprising:
- a step for forming a first gate electrode using an inert metal on a transparent support substrate;
- a step for forming a second gate electrode using an active metal on the first gate electrode;
- a step for forming a polymeric gate-insulating layer using a fluoropolymer on the second gate electrode;
- a step for forming a source electrode and a drain electrode on the polymeric gate-insulating layer;
- and
- a step for forming an organic semiconductor layer on the source electrode and the drain electrode.
A method for manufacturing a transparent organic thin-film transistor comprising:
- a step for forming a first gate electrode using an inert metal on a transparent support substrate;
- a step for forming a second gate electrode using an active metal on the first gate electrode;
- a step for forming a polymeric gate-insulating layer using a fluoropolymer on the second gate electrode;
- a step for forming an organic semiconductor layer on the polymeric gate-insulating layer;
- and
- a step for forming a source electrode and a drain electrode on the organic semiconductor layer.
Dependencies are inferred from the claim text.