Resistive ram, method for fabricating the same, and method for driving the same
AssigneesSK hynix Inc., Gwangju Institute of Science and Technology
InventorsHyun-Sang HWANG, Xinjun LIU, Myung-Woo SON
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Abstract
A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide.
Claims11
1-6. (canceled)
A method for fabricating a resistive random access memory (ReRAM), comprising:
- forming a non-stoichiometric phase change layer over a first electrode;
- forming a second electrode over the phase change layer;
- and
- applying a voltage to the first and second electrodes, modifying the phase change layer into a threshold switching layer for a switching operation, and oxidizing a part of the second electrode to form a resistance change layer.
16-20. (canceled)
Dependencies are inferred from the claim text.