Deterministic seeding of switching filament in oxide-based memristive devices
AssigneeCarnegie Mellon University
InventorsMohamed Abdeltawab Abdelmoula, Marek Skowronski, Abhishek A. Sharma, James A. Bain
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Abstract
A method for manufacturing an RRAM cell includes providing a metal-insulator-metal stack and exposing a subsection of a MIM stack to particle bombardment and/or radiation. Exposing a subsection of the MIM stack to particle bombardment and/or radiation forms localized defects in the functional layer of the MIM stack, thereby reducing the required forming voltage of the RRAM cell and further providing precise control over the location of a conductive filament created in the MIM stack during forming of the device.
Claims30
A method for manufacturing a resistive random access memory (RRAM) cell comprising:
- providing a metal-insulator-metal (MIM) stack;
- and
- exposing a subsection of the MIM stack to particle bombardment.
A method for manufacturing a resistive random access memory (RRAM) cell comprising:
- providing a first metal electrode;
- providing a functional layer over the first metal electrode;
- providing a second metal electrode over the functional layer;
- providing a hard mask over the second metal electrode, leaving a subsection of the second metal electrode exposed through the hard mask;
- bombarding the hard mask and the exposed portion of the second metal electrode with particles.
A resistive random access memory (RRAM) cell comprising:
- a first metal electrode;
- a second metal electrode;
- and
- a functional layer between the first metal electrode and the second metal electrode, the functional layer including a low-resistance region between the first metal electrode and the second metal electrode created by a concentration of defects in the functional layer formed due to particle bombardment of the low-resistance region.
Dependencies are inferred from the claim text.