Storage device and storage unit

A storage device provided with a first electrode, a storage layer, and a second electrode, the first electrode, the storage layer, and the second electrode being provided in this order, the storage layer comprising:

• an ion source layer including one or more kinds of chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or more kinds of transition metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table;
• and
• a resistance change layer including one or more kinds of transaction metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table, and oxygen (O).

A storage unit provided with a plurality of storage devices and a pulse application means, each of the storage devices including a first electrode, a storage layer, and a second electrode in this order, the pulse application means configured to selectively apply a pulse of a voltage or a current to the plurality of storage devices, the storage layer comprising:

• an ion source layer including one or more kinds of chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or more kinds of transition metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table;
• and
• a resistance change layer including boron (B) and oxygen (O).

A storage unit provided with a plurality of storage device and a pulse application means, each of the storage devices including a first electrode, a storage layer, and a second electrode in this order, the pulse application means configured to selectively apply a pulse of a voltage or a current to the plurality of storage devices, the storage layer comprising:

• an ion source layer including one or more kinds of chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or more kinds of transition metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table;
• and
• a resistance change layer including one or more kinds of transaction metal elements selected from Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table, and oxygen (O).