Memory Cells and Methods of Forming Memory Cells

A method of forming a memory cell, comprising:

• forming a programmable material directly against another material, the programmable material joining said other material along an interface;
• one or both of the programmable material and the other material having a crystallinity along said interface, and having a first concentration of dangling bonds along said interface;
• and
• implanting dopant into the programmable material and the other material to alter the crystallinity of one or both of the other material and the programmable material along said interface, and/or to increase a concentration of dangling bonds along the interface.

A method of forming a memory cell, comprising:

• forming a first ovonic material over a first electrode material, the first ovonic material joining the first electrode material at a first interface;
• forming a second electrode material over the first ovonic material, the first ovonic material joining the second electrode material at a second interface;
• forming a second ovonic material over the second electrode material, the second ovonic material joining the second electrode material at a third interface;
• forming a third electrode material over the second ovonic material, the second ovonic material joining the third electrode material at a fourth interface;
• one of the first and second ovonic materials being an ovonic memory material, and the other of the first and second ovonic materials being an ovonic threshold switch material;
• and
• implanting dopant into the first and second ovonic materials, and into the first, second and third electrodes to form damage regions extending across the first, second, third and fourth interfaces and to improve adhesion of the ovonic materials and electrode materials across said interfaces.

A memory cell, comprising:

• a first ovonic material over a first electrode material, the first ovonic material joining the first electrode material at a first boundary band;
• a second electrode material over the first ovonic material, the first ovonic material joining the second electrode material at a second boundary band;
• a second ovonic material over the second electrode material, the second ovonic material joining the second electrode material at a third boundary band;
• a third electrode material over the second ovonic material, the second ovonic material joining the third electrode material at a fourth boundary band;
• one of the first and second ovonic materials being an ovonic memory material, and the other of the first and second ovonic materials being an ovonic threshold switch material;
• and
• wherein the first, second, third and fourth boundary bands comprise ovonic materials embedded in electrode materials and vice versa, and comprise damage-producing implant species embedded in the electrode materials and the ovonic materials.