Phase change memory cell and phase change memory
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsPENG LIU, QUN-QING LI, KAI-LI JIANG, SHOU-SHAN FAN
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Abstract
A phase change memory cell includes a carbon nanotube layer, a phase change layer, a first electrode, a second electrode, and a third electrode. At least part of the phase change layer is overlapped with the carbon nanotube layer. The first electrode and the second electrode are electrically connected with the carbon nanotube layer, wherein the first electrode and the second electrode are configured to apply a first voltage to the carbon nanotube layer. The third electrode is electrically connected with the phase change layer, wherein the third electrode and the first electrode are configured to apply a second voltage to the phase change layer.
Claims20
A phase change memory cell, comprising:
- a first carbon nanotube layer;
- a phase change layer, wherein at least part of the phase change layer is overlapped with the first carbon nanotube layer;
- a first electrode and a second electrode electrically connected with the first carbon nanotube layer, wherein the first electrode and the second electrode are configured to apply a first voltage to the first carbon nanotube layer;
- and
- a third electrode electrically connected with the phase change layer, wherein the third electrode and the first electrode are configured to apply a second voltage to the phase change layer.
A phase change memory cell, comprising:
- a first electrode;
- a second electrode, wherein the second electrode is intersected with and spaced from the first electrode to define an intersection;
- a first phase change layer and a carbon nanotube layer stacked together and sandwiched between the first electrode and the second electrode at the intersection, wherein the first electrode and the second electrode are configured to apply a first voltage to the phase change layer;
- a third electrode and a fourth electrode are electrically connected with the carbon nanotube layer, wherein the third electrode and the fourth electrode are configured to apply a second voltage to the carbon nanotube layer.
A phase change memory, comprising:
- a substrate;
- a plurality of row electrode leads substantially parallel to each other and located on the substrate;
- a plurality of column electrode leads substantially parallel to each other and located on the substrate, wherein the plurality of column electrode leads are set an angle relative to the plurality row electrode leads to define a grid having a plurality of sections;
- a plurality of phase change memory cells, wherein each phase change memory cell is received in one of the plurality of sections, the phase change memory cell comprises a carbon nanotube layer, a phase change layer, a first electrode and a second electrode electrically connected with the carbon nanotube layer, and at least part of the phase change layer is overlapped with the carbon nanotube layer;
- the first electrode and the second electrode are adapted to apply a first voltage to the carbon nanotube layer;
- and one of the plurality of column electrode leads is electrically connected with the phase change layer, wherein one of the plurality of column electrode leads and the first electrode are configured to apply a second voltage to the phase change layer.
Dependencies are inferred from the claim text.