Phase change memory stack with treated sidewalls

A method for fabricating a memory device comprising:

• forming a plurality of memory stacks, each memory stack fabricated by:
• forming a first carbon electrode on a word line material;
• forming a selector device material on the first carbon electrode;
• forming a second carbon electrode on the selector device material;
• forming a phase change material on the second carbon electrode;
• forming a third carbon electrode on the phase change material;
• patterning and etching the selector device material, the first, second, and third carbon electrodes, and the phase change material to form the plurality of memory stacks;
• and
• forming a gradient structured adhesion species on the sidewalls of the memory stack using an implant process and a deposition process, the gradient structure comprising a film of the adhesion species and an implanted adhesion species that intermixes with an element of the memory stack to terminate unsatisfied atomic bonds of the element;
• and
• forming a liner material on the sidewalls of each memory stack by implanting a dielectric material into the film of the adhesion species.

A memory system comprising:

• a controller to control the system;
• and
• a memory device, coupled to the controller, the memory device comprising a plurality of memory stacks, each memory stack comprising:
• a first carbon electrode;
• a selector device on the first carbon electrode;
• a second carbon electrode on the selector device;
• a phase change material on the second carbon electrode;
• a third carbon electrode on the phase change material;
• an adhesion species doped into each sidewall of the memory stack, wherein the adhesion species is configured to intermix with the carbon of the second electrode;
• and
• a sidewall liner material on the sidewalls of the memory stack wherein the sidewall liner comprises a deposited film of the adhesion species that has been implanted with a dielectric material.