Phase change memory stack with treated sidewalls

A method for fabricating a memory device comprising:

• forming a plurality of memory stacks, each memory stack formed by:
• forming a first carbon electrode over a word line material;
• forming a selector device material over the first carbon electrode;
• forming a second carbon electrode over the selector device material;
• forming a phase change material over the second carbon electrode;
• forming a third carbon electrode over the phase change material;
• patterning and etching the selector device material, the first, second, and third carbon electrodes, and the phase change material to form the plurality of memory stacks;
• and
• implanting a boron adhesion species into the sidewalls of the memory stack using a plasma doping process;
• and
• forming a liner material on the sidewalls of each memory stack wherein the boron adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner.

A memory system comprising:

• a controller to control the system;
• and
• a memory device, coupled to the controller, the memory device comprising:
• a memory stack comprising:
• a first carbon electrode;
• a selector device on the first carbon electrode;
• a second carbon electrode on the selector device;
• a phase change material on the second carbon electrode;
• a third carbon electrode on the phase change material;
• and
• an adhesion species doped into at least sidewalls of the second carbon electrode;
• and
• a sidewall liner material on sidewalls of the memory stack wherein the adhesion species is configured to intermix with the carbon of the second carbon electrode and a material of the sidewall liner.