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US 2015/0318465 A1Published application
Magnetoresistive Structure having Two Dielectric Layers, and Method of Manufacturing Same
AssigneeEverspin Technologies, Inc.
InventorsSanjeev Aggarwal, Kerry Nagel, Jason Janesky
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Abstract
A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least an encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes.
Claims19
A method of manufacturing a magnetoresistive device from:
- (i) a first electrode, (ii) a first dielectric layer disposed over the first electrode, (iii) a free layer disposed over the first tunnel barrier, (iv) a second tunnel barrier layer disposed over the free layer, (v) a second electrode disposed over the second dielectric layer, method of manufacturing comprising:
- etching through the second electrode and the second dielectric layer to provide a sidewall of (i) the second electrode and (ii) the second dielectric layer;
- forming an encapsulation material on the sidewall of the second electrode and the second dielectric layer;
- and
- after forming the encapsulation material on the sidewall of the second electrode and the second dielectric layer, etching through the surface of the free magnetic layer and at least a portion of the first dielectric layer.
2 more elements
A magnetoresistive structure comprising:
- a first electrode including a plurality of layers of ferromagnetic materials;
- a first dielectric layer, disposed on the first electrode, including a cross-sectional area;
- a free magnetic layer, disposed on the first dielectric layer, including a plurality of ferromagnetic materials;
- a second dielectric layer, disposed on the free magnetic layer, including a cross-sectional area and a sidewall, wherein the cross-sectional area of the first dielectric layer is greater than the cross-sectional area of the second dielectric layer;
- a non-ferromagnetic electrode, disposed on the second dielectric layer, including a sidewall;
- and
- encapsulation material disposed on the sidewall of the non-ferromagnetic electrode and the sidewall of the second dielectric layer.
4 more elements
A magnetoresistive structure comprising:
- a first electrode;
- a first dielectric layer, disposed on the first electrode, including a cross-sectional area;
- a free magnetic layer, disposed on the first dielectric layer, including a plurality of ferromagnetic materials;
- a second dielectric layer, disposed on the free magnetic layer, including a cross-sectional area and a sidewall, wherein the cross-sectional area of the first dielectric layer is greater than the cross-sectional area of the second dielectric layer;
- a second electrode, disposed on the second dielectric layer, including one or more ferromagnetic materials and a sidewall;
- and
- encapsulation material disposed on the sidewall of the second electrode and the sidewall of the second dielectric layer.
4 more elements
Dependencies are inferred from the claim text.