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US 2015/0318446 A1Published application
Low-Temperature Fabrication of Transparent Conductive Contacts for p-GaN and n-GaN
AssigneeIntermolecular, Inc.
InventorsJianhua Hu, Heng Kai Hsu, Minh Huu Le, Sandeep Nijhawan, Teresa B. Sapirman
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Abstract
A ternary transparent conductive oxide, indium zinc oxide (IZO), is formed as a thin film by co-sputtering zinc oxide with indium oxide at a deposition temperature between 25 and 200 C. Optionally, up to 1-2% Al may be added by various methods. The layers may be annealed at temperatures between 200 and 400 C. Measurements of IZO with 75-85 wt % In2O3 showed low resistivity and low visible absorbance, both of which were thermally stable up to 400 C.
Claims19
An optoelectronic device, comprising:
- a substrate;
- a gallium nitride (GaN) layer formed over or in the substrate;
- and
- a transparent conductive layer formed over the GaN layer;
- wherein the transparent conductive layer comprises indium zinc oxide;
- wherein the indium zinc oxide comprises indium oxide;
- and
- wherein a weight percentage of the indium oxide in the indium zinc oxide is between about 60% and about 92%.
5 more elements
12-20. (canceled)
An optoelectronic device, comprising:
- a substrate;
- a first gallium nitride (GaN) layer formed over or in the substrate;
- an active photoemissive layer formed over the first GaN layer;
- a second GaN layer formed over the active photoemissive layer;
- and
- a transparent conductive layer formed over the second GaN layer, wherein the transparent conductive layer comprises indium zinc oxide, the indium zinc oxide comprises indium oxide, and a weight percentage of the indium oxide in the indium zinc oxide is between about 60% and about 92%.
3 more elements
Dependencies are inferred from the claim text.