Nitride-based semiconductor light-emitting device and method for fabricating the same

A nitride-based semiconductor light-emitting device, comprising:

• a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane;
• and
• an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region,
• wherein
• the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm;
• a peak intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 30 to and not more than 150;
• and
• the Ag electrode has a reflectance of not less than 70%.

A light source, comprising:

• a nitride-based semiconductor light-emitting device;
• and
• a wavelength conversion section containing a fluorescent substance for converting a wavelength of light emitted from the nitride-based semiconductor light-emitting device,
• wherein
• the nitride-based semiconductor light-emitting device includes:
• a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane;
• and
• an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region,
• the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm;
• a peak intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 30 to and not more than 150;
• and
• the Ag electrode has a reflectance of not less than 70%.