Integrated LED Light-Emitting Device and Fabrication Method Thereof

A method of fabricating an integrated LED light-emitting device, comprising:

• epitaxial growth:
• form a LED light-emitting epitaxial laminated layer over a growth substrate through epitaxial growth;
• fabrication of chip:
• determine a cutting path over a surface of the LED light-emitting laminated layer that divides the LED light-emitting laminated layer into a series of light-emitting units, wherein each unit surface is divided into a P electrode region, an N electrode region and an isolating region;
• fabricate an electrode pad layer over the LED light-emitting laminated layer that covers the cutting path and the P and N electrode regions with sufficient thickness to support the LED light-emitting epitaxial laminated layer;
• remove the growth substrate and the LED light-emitting epitaxial laminated layer of the cutting path to form a series of LED light-emitting epitaxial units connected by the electrode pad layer;
• device cutting:
• cut the chip along the cutting path as required to form a series of integrated LED light-emitting devices comprising a plurality of LED light-emitting epitaxial units, and the P and N connection circuit of the adjacent film LED light-emitting epitaxial unit is a plane with substantially no height difference.

A light-emitting system comprising a plurality of integrated LED light-emitting devices, each device comprising:

• at least two isolated LED light-emitting epitaxial units each having an upper and a lower surface, wherein the upper surface is a light-emitting surface;
• and
• an electrode pad layer over the lower surface, with a sufficient thickness for supporting the LED epitaxial unit and connecting to each LED light-emitting epitaxial unit to form a connection circuit plane with substantially no height difference;
• wherein the electrode pad layer comprises a P electrode region and an N electrode region.