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US 2015/0318440 A1Published application
Semiconductor light emitting device having patterns
AssigneeRohm Co., Ltd.
InventorYohei ITO
Life of this patent
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Abstract
A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode.
Claims18
A method of manufacturing a semiconductor light emitting device, the method comprising:
- forming a substrate structure;
- forming a semiconductor layer on the substrate structure, the semiconductor layer including a light emitting layer;
- forming an electrode on a surface of the semiconductor layer;
- and
- performing a frost process on the surface of the semiconductor layer to form a frost-processed layer including a rough uneven portion and a microstructural uneven portion on the surface of the semiconductor layer at a side of the electrode.
2 more elements
A method of manufacturing a semiconductor light emitting device, the method comprising:
- performing a first frost process on a surface of a semiconductor layer of the semiconductor light emitting device to form a frost-processed layer including a rough uneven portion;
- and
- performing a second frost process on the frost processed layer to form a double frost-processed layer including a microstructural uneven portion on the surface of the semiconductor layer at a side of the electrode,
- wherein the rough uneven portion is finer than the microstructural uneven portion.
1 more element
Dependencies are inferred from the claim text.