Back to results
US 2015/0318439 A1Published application
Optoelectronic device and method for manufacturing the same
AssigneeEpistar Corporation
InventorsWei Chih PENG, Shih Te PAI
Life of this patent
Estimating the term…
Abstract
An optoelectronic device includes a substrate; a first semiconductor layer having a first conductivity-type impurity formed on the substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer having a second conductivity-type impurity formed on the active layer; and a hollow component formed inside the active layer or the second semiconductor layer, wherein a material of the active layer or a material of the second semiconductor layer comprises group IIIA nitride semiconductor.
Claims20
An optoelectronic device comprising:
- a substrate;
- a first semiconductor layer having a first conductivity-type impurity formed on the substrate,
- an active layer formed on the first semiconductor layer;
- a second semiconductor layer having a second conductivity-type impurity formed on the active layer;
- and
- a hollow component formed inside the active layer or the second semiconductor layer;
- wherein a material of the active layer or a material of the second semiconductor layer comprises group IIIA nitride semiconductor.
4 more elements
A method of fabricating an optoelectronic device, comprising:
- providing a substrate;
- forming a first semiconductor layer having a first conductivity-type impurity on the substrate;
- forming an active layer on the first semiconductor layer;
- forming a second semiconductor layer having a second conductivity-type impurity;
- and
- forming a hollow component inside the second semiconductor layer and/or the active layer;
- wherein a material of the active layer or a material of the second semiconductor layer comprises group IIIA nitride semiconductor.
4 more elements
Dependencies are inferred from the claim text.