Method for separating growth substrate, method for manufacturing light-emitting diode, and light-emitting diode manufactured using methods

A light emitting diode comprising:

• a support substrate having a depression formed around an edge of the support substrate;
• and
• a semiconductor stack structure placed over the support substrate and comprising an active layer;
• and
• a periodic convex-concave pattern formed on an upper surface of the semiconductor stack structure.

A method of separating a growth substrate, comprising:

• preparing a growth substrate;
• forming a mask pattern over the growth substrate;
• growing a sacrificial layer over the growth substrate such that at least a portion of the mask pattern is exposed;
• etching at least a portion of the sacrificial layer via electrochemical etching (ECE);
• forming a nitride semiconductor stack structure covering the mask pattern;
• and
• separating the growth substrate from the nitride semiconductor stack structure.

A light emitting diode comprising:

• a support substrate;
• a semiconductor stack structure placed over the support substrate and comprising an active layer;
• a convex-concave pattern formed on an upper surface of the semiconductor stack structure;
• and
• an electrode formed over a portion of the convex-concave pattern.

A method of fabricating a light emitting diode, comprising:

• preparing a growth substrate including a pattern;
• forming a sacrificial layer and a mask pattern over the growth substrate such that at least a portion of the sacrificial layer is exposed through the mask pattern;
• etching at least a portion of the sacrificial layer to form a void;
• forming a nitride semiconductor stack structure covering the mask pattern;
• and
• separating the growth substrate from the nitride semiconductor stack structure.