Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

A method for manufacturing a semiconductor light emitting device, comprising:

• forming a light emitting layer including a nitride semiconductor on an n-type semiconductor layer including a nitride semiconductor;
• forming a first film of AlxGa1-xN (0.05≦x≦0.2) on the light emitting layer, the first film including Mg;
• forming a second film including a nitride semiconductor including Mg on the first film;
• and
• forming a third film including a nitride semiconductor including Mg on the second film,
• the forming of the first film including alternately and multiply repeating:
• a first process of supplying a group V source-material gas, a gas including Ga, a gas including Al, and a gas including Mg;
• and
• a second process of supplying the group V source-material gas without supplying the gas including Ga, the gas including Al, and the gas including Mg,
• a maximum value of a concentration of Mg in a p-side region including the light emitting layer, the first film, and the second film being not less than 1×1020 cm−3 and not more than 3×1020 cm−3,
• an Al concentration in the p-side region having a maximum value at a first position,
• the Al concentration being 1/100 of the maximum value at a second position arranged with the first position along a first direction from the light emitting layer toward the first film in a region between the first position and a position corresponding to the light emitting layer,
• a Mg concentration at the second position being not less than 2×1018 cm −3 .