Fully integrated cmos-compatible photodetector with color selectivity and intrinsic gain
AssigneeWilliam Marsh Rice University
InventorsBob Yi Zheng, Yumin Wang, Naomi J. Halas, Peter Nordlander
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Abstract
A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.
Claims20
A metal-semiconductor-metal photodetecting device, comprising:
- a p-type silicon substrate;
- an oxide layer disposed on the p-type silicon substrate;
- Schotty junctions disposed adjacent to the oxide layer on the p-type silicon substrate;
- and
- a plasmonic grating disposed on the oxide layer,
- wherein the plasmonic grating provides wavelength range selectability for the photodetecting device.
A method of manufacturing a photodetecting device, the method comprising:
- reactive ion etching a thermally grown oxide layer on a p-type silicon substrate using CF4 and O2 gases;
- sonicating the substrate in acetone, followed by rinsing the substrate with isopropyl alcohol, and drying with N2 gas;
- forming Schottky junctions on the substrate;
- and
- using e-beam lithography to dispose a plasmonic grating on the oxide layer,
- wherein the plasmonic grating provides wavelength range selectability for the photodetecting device.
Dependencies are inferred from the claim text.